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TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4N60G TO-220 / TO-220F TMP4N60G / TMPF4N60G Halogen Free Absolute Maximum Ratings Parameter Symbol TMP4N60(G) TMPF4N60(G) Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGS 30 V TC = 25 4 4 * A Continuous Drain Current ID TC = 100 2.43 2.43 * A Pulsed Drain Current (Note 1) IDM 16 16* A Single Pulse Avalanche Energy (Note 2) EAS 165 mJ Repetitive Avalanche Current (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 9.25 mJ TC = 25 92.5 32 W

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 tmp4n60 tmpf4n60.pdf Проектирование, MOSFET, Мощность

 tmp4n60 tmpf4n60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tmp4n60 tmpf4n60.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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