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TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP9N60 / TMPF9N60 TO-220 / TO-220F TMP9N60 / TMPF9N60 RoHS TMP9N60G / TMPF9N60G TO-220 / TO-220F TMP9N60G / TMPF9N60G Halogen Free Absolute Maximum Ratings Parameter Symbol TMP9N60(G) TMPF9N60(G) Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGS 30 V TC = 25 9 9 * A Continuous Drain Current ID TC = 100 5 5 * A Pulsed Drain Current (Note 1) IDM 44 44* A Single Pulse Avalanche Energy (Note 2) EAS 662 mJ Repetitive Avalanche Current (Note 1) IAR 9 A Repetitive Avalanche Energy (Note 1) EAR 15.8 mJ TC = 25 158 51.4 W Power

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 tmp9n60 tmpf9n60.pdf Проектирование, MOSFET, Мощность

 tmp9n60 tmpf9n60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tmp9n60 tmpf9n60.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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