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TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand high energy pulse in the Fast switchingavalanche and commutation mode. These devices are well 100% avalanche testedsuited for high efficiency switched mode power supplies,active power factor correction based on half bridge Improved dv/dt capabilitytopology.Absolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter TSP4N60M TSF4N60M UnitsVDSS Drain-Source Voltage 600 VVGS Gate-Source Voltage 30 VTC = 25 4.0 4.0* AID Drain Curr