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VBM1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C18Continuous Drain Current (TJ = 175 C) IDTC = 125 C15AIDMPulsed Drain Current 68IASAvalanche Current 18L = 0.1 mHEAS200 mJSingle Pulse Avalanche EnergybTC = 25 C105PDWMaximum Power DissipationbTA = 25 Cd 3.75TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RE