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VBM1101N/VBL1101Nwww.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C 100Continuous Drain Current (TJ = 150 C) IDaTC = 125 C 75AIDMPulsed Drain Current 300IASAvalanche Current 75L = 0.1 mHmJEAS280Single Pulse Avalanche EnergybTC = 25 C (TO-220AB and TO-263) 250cPDWMaximum Power DissipationbTA = 25 C (TO-263)d 3.75TJ, TstgOperating Juncti