Скачать даташит для vbm1102n:

VBM1102Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C70aContinuous Drain Current (TJ = 175 C) IDTC = 125 C35aAIDMPulsed Drain Current 145IASAvalanche Current 31L = 0.1 mHEAS60 mJSingle Pulse Avalanche EnergybTC = 25 C355cPDWMaximum Power DissipationbTA = 25 Cd 3.35TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMA