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VBM1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C45Continuous Drain Current (TJ = 175 C) IDTC = 125 C30AIDMPulsed Drain Current 135IARAvalanche Current 35L = 0.1 mH EAR61 mJRepetitive Avalanche EnergyaTC = 25 C127bPDMaximum Power Dissipationa WTA = 25 Cc 3.75TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATINGSParameter Sym