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WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has beenespecially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for half bridge and full bridge resonant topology line aelectronic lamp ballast.Absolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 600 VDSSContinuous Drain Current(@Tc=25) 4* AIDContinuous