IKW20N60H3 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW20N60H3
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 170 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 23 nS
Coesⓘ - Выходная емкость, типовая: 70 pF
Тип корпуса: TO247
Аналог (замена) для IKW20N60H3
IKW20N60H3 Datasheet (PDF)
ikw20n60h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW20N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRE
ikw20n60h3 rev1 2g.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW20N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TREN
ikp20n60t ikb20n60t ikw20n60t.pdf

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F
aikw20n60ct.pdf

AIKW20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Другие IGBT... IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , MBQ50T65FESC , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 .
History: RJH60D6DPM
History: RJH60D6DPM



Список транзисторов
Обновления
IGBT: DHG20T65D | G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2
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