Справочник IGBT. RJH60D2DPP-M0

 

RJH60D2DPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60D2DPP-M0
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 34
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 25
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 13
   Емкость коллектора типовая (Cc), pf: 40
   Общий заряд затвора (Qg), typ, nC: 19
   Тип корпуса: TO220F

 Аналог (замена) для RJH60D2DPP-M0

 

 

RJH60D2DPP-M0 Datasheet (PDF)

 ..1. Size:99K  renesas
 rjh60d2dpp-m0.pdf

RJH60D2DPP-M0 RJH60D2DPP-M0

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 3.1. Size:121K  renesas
 rjh60d2dpp-e0.pdf

RJH60D2DPP-M0 RJH60D2DPP-M0

Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 4.1. Size:82K  renesas
 r07ds0160ej rjh60d2dpp.pdf

RJH60D2DPP-M0 RJH60D2DPP-M0

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:98K  renesas
 rjh60d2dpe.pdf

RJH60D2DPP-M0 RJH60D2DPP-M0

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:82K  renesas
 r07ds0159ej rjh60d2dpe.pdf

RJH60D2DPP-M0 RJH60D2DPP-M0

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

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