Справочник IGBT. RJH60D5DPK

 

RJH60D5DPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60D5DPK
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 120 pF
   Тип корпуса: TO3P

 Аналог (замена) для RJH60D5DPK

 

 

RJH60D5DPK Datasheet (PDF)

 ..1. Size:98K  renesas
 rjh60d5dpk.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400600V - 37A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 ..2. Size:82K  renesas
 r07ds0163ej rjh60d5dpk.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:85K  renesas
 r07ds0527ej rjh60d5dpq.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:98K  renesas
 rjh60d5dpm.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.3. Size:82K  renesas
 r07ds0174ej rjh60d5dpm.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100Silicon N Channel IGBT Rev.1.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.4. Size:82K  renesas
 rjh60d5dpq-a0.pdf

RJH60D5DPK RJH60D5DPK

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

Другие IGBT... RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , GT30F132 , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH .

 

 
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