Справочник IGBT. RJH60D0DPK

 

RJH60D0DPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60D0DPK
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 140
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 45
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 20
   Емкость коллектора типовая (Cc), pf: 70
   Общий заряд затвора (Qg), typ, nC: 46
   Тип корпуса: TO3P

 Аналог (замена) для RJH60D0DPK

 

 

RJH60D0DPK Datasheet (PDF)

 ..1. Size:97K  renesas
 rjh60d0dpk.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400600V - 22A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 ..2. Size:82K  renesas
 r07ds0155ej rjh60d0dpk.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:97K  renesas
 rjh60d0dpm.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300600V - 22A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:82K  renesas
 rjh60d0dpq-a0.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.3. Size:83K  renesas
 r07ds0156ej rjh60d0dpm.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.4. Size:85K  renesas
 r07ds0526ej rjh60d0dpq.pdf

RJH60D0DPK RJH60D0DPK

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

Другие IGBT... RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , IRGP4062D , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 .

 

 
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