ISL9V3040S3 - аналоги, основные параметры, даташиты
Наименование: ISL9V3040S3
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 400 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 12 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 21 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Тип корпуса: TO262AA
Аналог (замена) для ISL9V3040S3
- подбор ⓘ IGBT транзистора по параметрам
ISL9V3040S3 даташит
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf
April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT Formerly Developmental Type 49362 General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and Applications ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition Coi
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
isl9v3040d3st-f085c isl9v3040s3st-f085c.pdf
ISL9V3040x3ST-F085C EcoSPARK) Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features SCIS Energy = 300 mJ at TJ = 25 C Logic Level Gate Drive www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant COLLECTOR Applications Automotive Ignition Coil Driver Circuits R1 High Current Ignition System GATE Coi
isl9v3040d3s isl9v3040s3s isl9v3040p3.pdf
DATA SHEET www.onsemi.com ECOSPARK) Ignition IGBT COLLECTOR 300 mJ, 400 V, N-Channel Ignition IGBT R1 GATE ISL9V3040D3S, R2 ISL9V3040S3S, ISL9V3040P3 EMITTER General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D2-Pak (T
Другие IGBT... IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , IXRH40N120 , RGT00TS65D , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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