Справочник IGBT. APT75GN60SDQ2G

 

APT75GN60SDQ2G Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT75GN60SDQ2G
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 536 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 155 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 48 nS
   Coesⓘ - Выходная емкость, типовая: 370 pF
   Тип корпуса: TO268AB
 

 Аналог (замена) для APT75GN60SDQ2G

   - подбор ⓘ IGBT транзистора по параметрам

 

APT75GN60SDQ2G Datasheet (PDF)

 ..1. Size:212K  microsemi
 apt75gn60sdq2g.pdf pdf_icon

APT75GN60SDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result

 5.1. Size:436K  apt
 apt75gn60ldq3g.pdf pdf_icon

APT75GN60SDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parameter

 5.2. Size:399K  apt
 apt75gn60bg.pdf pdf_icon

APT75GN60SDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.3. Size:212K  microsemi
 apt75gn60bdq2g.pdf pdf_icon

APT75GN60SDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT50GP60LDLG , APT50GT120B2RDLG , APT50GT120LRDQ2G , APT65GP60B2G , APT65GP60JDQ2 , APT75GN120JDQ3 , APT75GN60BDQ2G , APT75GN60LDQ3G , IKW30N60H3 , APT75GT120JRDQ3 , ART10U120 , ART20U120 , ART30U120 , ART40U120 , ART45U120SPEC , AUIRGDC0250 , SKM100GAL12T4 .

History: IXGX32N170AH1 | STGW75H65DFB2-4 | RJH60F5BDPQ-A0 | VS-25MT060WFAPBF | IRGP4066D-EPBF

 

 
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