TPCS8004 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCS8004
Маркировка: S8004
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток (Uds): 200 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 1.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 4.5 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TSSOP8
TPCS8004 Datasheet (PDF)
1.1. tpcs8004.pdf 
Size:224K _toshiba2
TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 High Speed Switching Applications Unit: mm Switching Regulator Applications DC-DC Converters • Small footprint due to small and thin package • Low drain-source ON resistance: R = 0.56 Ω (typ.) DS (ON) • High forward transfer admittance: |Y | = 1.8 S (typ.) fs • Low leakage curr
3.1. tpcs8007-h.pdf Size:235K _toshiba2
TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8007-H High-Speed Switching Applications Unit: mm Switching Regulator Applications DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.1 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS =
3.2. tpcs8009-h.pdf Size:235K _toshiba2
TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8009-H High-Speed Switching Applications Unit: mm Switching Regulator Applications DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.1 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS =
3.3. tpcs8008-h.pdf Size:215K _toshiba2
TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8008-H High-Speed Switching Applications Unit: mm Switching Regulator Applications DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS =
3.4. tpcs8006.pdf Size:157K _toshiba2
TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8006 High-Speed Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.6 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 250 V) •
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
