RJK2006DPF - Аналоги. Основные параметры
Наименование производителя: RJK2006DPF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
Тип корпуса: LDPAK
Аналог (замена) для RJK2006DPF
RJK2006DPF технические параметры
rej03g0512 rjk2006dpj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk2006dpe.pdf
Isc N-Channel MOSFET Transistor RJK2006DPE FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
rej03g0474 rjk2009dpm.pdf
Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol
Другие MOSFET... RJK1535DPE , RJK1536DPE , RJK1536DPN , RJK1555DPA , RJK1557DPA , RJK1560DPP-M0 , RJK1562DJE , RJK2006DPE , AO3401 , RJK2006DPJ , RJK2009DPM , RJK2017DPE , RJK2017DPP , RJK2054DPC , RJK2055DPA , RJK2057DPA , RJK2508DPK .
