Справочник MOSFET. SSF1007

 

SSF1007 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF1007
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 258 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 108 ns
   Cossⓘ - Выходная емкость: 454 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SSF1007

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF1007 Datasheet (PDF)

 ..1. Size:410K  silikron
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SSF1007

SSF1007Main Product Characteristics: VDSS 100V RDS(on) 5.8mohmTypID 130A Features and Benefits: SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the latest trench

 8.1. Size:659K  silikron
ssf1009.pdfpdf_icon

SSF1007

SSF1009 Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 8.2. Size:672K  silikron
ssf1006.pdfpdf_icon

SSF1007

SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 8.3. Size:921K  silikron
ssf1006a.pdfpdf_icon

SSF1007

SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

Другие MOSFET... 2SJ585LS , 2SJ589LS , 2N7002KB , 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , SSF1006H , IRFZ24N , SSF1009 , SSF1010 , SSF1010A , SSF1016 , SSF1016A , SSF1016D , SSF1020 , SSF1020A .

 

 
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