2SK3649-01MR - Даташиты. Аналоги. Основные параметры

2SK3649-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

isc N-Channel MOSFET Transistor 2SK3649-01MR FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3642 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, and 2SK3642-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronou

2SK3648-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

2SK3647-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (

2SK3644-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

2SK3645-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

SMD Type IC SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3643 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 Features +0.8 5.30+0.2 0.50-0.7 -0.2 Low on-state resistance RDS(on)1 =6 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =9 m MAX. (VGS =4.5 V, ID =32 A) 0.12

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3641 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 Features +0.8 5.30+0.2 0.50-0.7 -0.2 Low on-state resistance RDS(on)1 =14 m MAX. (VGS =10 V, ID =18A) 0.127 RDS(on)2 =25 m MAX. (VGS =4.5 V, ID =15 A) 0.80+0.1 max -0.1 Low Ciss Ciss = 930 pF TYP. 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source Absolute

SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3640 TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Features +0.2 5.30-0.2 0.50+0.8 -0.7 Low on-state resistance RDS(on)1 =21m MAX. (VGS =10 V, ID =9A) RDS(on)2 =40m MAX. (VGS =4.5 V, ID =9 A) 0.127 0.80+0.1 max -0.1 Low Ciss Ciss = 570 pF TYP. Built-in gate protection diode 1. Gate 2.3 0.60+0.1 -0.1 4.60+0.1

isc N-Channel MOSFET Transistor 2SK3646L FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3646S FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3648-01 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3644-01 FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3645-01MR FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so