ZVNL120ASTOA - Даташиты. Аналоги. Основные параметры

N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS VGS= 10V * RDS(on)=10 8V 6V * Low threshold 4V D APPLICATIONS G S * Telephone handsets E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 2V Drain-Source Voltage VDS 200 V 8 10 Continuous Drain Current at Tamb=25 C ID 180 mA Pulsed Drain

N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS VGS= 10V * RDS(on)=10 8V 6V * Low threshold 4V D APPLICATIONS G S * Telephone handsets E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 2V Drain-Source Voltage VDS 200 V 8 10 Continuous Drain Current at Tamb=25 C ID 180 mA Pulsed Drain

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis

N-CHANNEL ENHANCEMENT ZVNL120C MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD D I I TI T I D E-Line T V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis