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ZXMS6002GQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: ZXMS6002GQ

Маркировка: ZXMS6002

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.5 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Пороговое напряжение включения Ugs(th): 2.1 V

Максимально допустимый постоянный ток стока (Id): 1.6 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm

Тип корпуса: SOT-223

Аналог (замена) для ZXMS6002GQ

 

 

ZXMS6002GQ Datasheet (PDF)

1.1. zxms6002gq.pdf Size:626K _upd-mosfet

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ZXMS6002GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET WITH STATUS INDICATION Product Summary Features and Benefits  Continuous Drain Source Voltage VDS= 60V  Status Pin (Analog Status Indication)  On-State Resistance 500mΩ  Logic Level Input  Nominal Load Current (VIN = 5V) 1.4A  Short Circuit Protection with Auto Restart  Clamping E

3.1. zxms6004sgq.pdf Size:379K _upd-mosfet

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ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS= 60V  Compact High Power Dissipation Package  On-State Resistance 500mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 1.3A  Logic Level Input (3.3V and 5V)  Clamping Energy 480mJ  Short Circuit Pro

3.2. zxms6005dt8q.pdf Size:348K _upd-mosfet

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ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • On-State Resistance 200mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 1.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Circuit Protection with Aut

 3.3. zxms6006sgq.pdf Size:311K _upd-mosfet

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ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 480mJ • Short Circuit Protection

3.4. zxms6006dgq.pdf Size:340K _upd-mosfet

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Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 490mJ • Short Circuit Pro

 3.5. zxms6006dt8q.pdf Size:276K _upd-mosfet

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Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Cir

3.6. zxms6004dt8q.pdf Size:530K _upd-mosfet

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ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS = 60V  Compact Dual Package  On-State Resistance 500mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 1.2A  Logic Level Input (3.3V and 5V)  Clamping Energy 210mJ  Short Circuit Protection with Auto

3.7. zxms6005sgq.pdf Size:401K _upd-mosfet

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ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS = 60V  Compact High Power Dissipation Package  On-State Resistance 200mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 2A  Logic Level Input (3.3V and 5V)  Clamping Energy 480mJ  Short Circuit Pro

3.8. zxms6004dgq.pdf Size:425K _upd-mosfet

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ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS= 60V  Compact High Power Dissipation Package  On-State Resistance 500mΩ  Low Input Current  Nominal load current (VIN = 5V) 1.3A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit P

3.9. zxms6004ffq.pdf Size:454K _upd-mosfet

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ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET Product Summary Features and Benefits  Continuos Drain Source Voltage 60V  Compact High Power Dissipation Package  On-State Resistance 500mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 1.3A  Logic Level Input (3.3V and 5V)  Clamping Energy 90mJ  Short Circ

3.10. zxms6005dgq.pdf Size:242K _upd-mosfet

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ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage 60V  Compact High Power Dissipation Package  On-State Resistance 200mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 2.8A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit Protect

3.11. zxms6005dt8.pdf Size:247K _diodes

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A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

3.12. zxms6004ff.pdf Size:414K _diodes

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A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.3 A Clamping energy 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-volta

3.13. zxms6005dg.pdf Size:556K _diodes

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A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-temperat

3.14. zxms6003g.pdf Size:783K _diodes

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ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m Nominal load current (VIN = 5V) 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active S clamp) and ESD protected logic l

3.15. zxms6004dg.pdf Size:479K _diodes

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A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-volt

3.16. zxms6006dt8.pdf Size:267K _diodes

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A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit prot

3.17. zxms6006sg.pdf Size:243K _diodes

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A Product Line of Diodes Incorporated ZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection

3.18. zxms6006dg.pdf Size:241K _diodes

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A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection

3.19. zxms6004sg.pdf Size:480K _diodes

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A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.3 A Clamping energy 480mJ Description The ZXMS6004SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-volt

3.20. zxms6004dt8.pdf Size:236K _diodes

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A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

3.21. zxms6004ff.pdf Size:504K _kexin

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SMD Type MOSFET Transistors N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Features SOT-23 Unit: mm +0.1 2.9-0.1 Compact high power dissipation package +0.1 0.4 -0.1 Low input current 3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 Therm

Другие MOSFET... ZXMP6A17GQ , ZXMP6A17GTA , ZXMP6A17KTC , ZXMP6A17N8TC , ZXMP6A18KTC , ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , 75339P , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ .

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MOSFET: AM2398NE | AM2398N | AM2394NE | AM2392N | AM2391P | AM2390N | AM2381P | AM2374N | AM2373P | AM2372N | AM2371P | AM2370N | AM2362N | AM2361P | AM2360N |
 


 

 

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