AM3416 AiT Semiconductor Inc. MOSFET www.ait-ic.com N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3416 is available in a SOT-23 package. 20V/6A , R =26m(Max.) @V =4.5V DS(ON) GSR =37m(Max.) @V =2.5V DS(ON) GS ESD Protected Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

Analog Power AM3413PP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2400 @ VGS = -10V -0.74 Low thermal impedance -2002550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM3412NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)27 @ VGS = 10V6.3 Low thermal impedance 3035 @ VGS = 4.5V5.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

Analog Power AM3411PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7applications are DC-DC converters and -200.057 @ VGS = -2.5V -4.9power management in portab

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3A (V = -4.5V) DS(ON) D GSoperation with gate voltages as low as 1.8V. This R

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to V = -20V,I =-4A DS Dprovide excellent R , low gate charge and R

AiT Semiconductor Inc. AM3415 www.ait-ic.com SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3415 is the P-Channel logic enhancement -20V/-4.0A, R =45m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.0A, R =54m(typ.)@V =-2.5V DS(ON) GShigh cell density. Advanced trench technology to provide ex