Справочник MOSFET. UPA2762UGR

 

UPA2762UGR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA2762UGR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.2 nC
   trⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для UPA2762UGR

 

 

UPA2762UGR Datasheet (PDF)

 ..1. Size:199K  renesas
 upa2762ugr.pdf

UPA2762UGR UPA2762UGR

Preliminary Data Sheet PA2762UGR R07DS0011EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10

 8.1. Size:237K  renesas
 upa2763.pdf

UPA2762UGR UPA2762UGR

Preliminary Data Sheet PA2763 R07DS0003EJ0100Rev.1.00May 31, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

 8.2. Size:198K  renesas
 upa2761ugr.pdf

UPA2762UGR UPA2762UGR

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

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 upa2766t1a.pdf

UPA2762UGR UPA2762UGR

Data SheetPA2766T1A N-channel MOSFET R07DS0883EJ0102Rev.1.0230 V , 130 A , 0.88 m Nov 28, 2012Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4

 8.4. Size:140K  renesas
 upa2765t1a.pdf

UPA2762UGR UPA2762UGR

Data SheetPA2765T1A N-channel MOSFET R07DS0882EJ0102Rev.1.0230 V , 100 A , 1.3 m Nov 28, 2012Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5

 8.5. Size:138K  renesas
 upa2764t1a.pdf

UPA2762UGR UPA2762UGR

Data SheetPA2764T1A N-channel MOSFET R07DS0881EJ0102Rev.1.0230 V , 130 A , 1.10 m Nov 28, 2012Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

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