Справочник MOSFET. STD25P03L

 

STD25P03L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STD25P03L
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.072 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для STD25P03L

 

 

STD25P03L Datasheet (PDF)

 ..1. Size:112K  onsemi
 ntd25p03l std25p03l.pdf

STD25P03L STD25P03L

NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix

 9.1. Size:1281K  st
 std25n10f7 stf25n10f7 stp25n10f7.pdf

STD25P03L STD25P03L

STD25N10F7, STF25N10F7, STP25N10F7N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDSS ID PTOTmax.(1)DPAKSTD25N10F7 100 V 0.035 25 A 40 WSTF25N10F7 100 V 0.035 19 A 25 WTABSTP25N10F7 100 V 0.035 25 A 50 W1. @ VGS = 10 V 33

 9.2. Size:433K  st
 std25nf10l.pdf

STD25P03L STD25P03L

STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V

 9.3. Size:650K  st
 std25nf10la.pdf

STD25P03L STD25P03L

STD25NF10LAN-channel 100 V, 0.030 , 25 A DPAKSTripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTD25NF10LA 100 V

 9.4. Size:426K  st
 std25nf10l std25nf10lt4.pdf

STD25P03L STD25P03L

STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V

 9.5. Size:402K  st
 std25nf10.pdf

STD25P03L STD25P03L

STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V

 9.6. Size:395K  st
 std25nf10t4.pdf

STD25P03L STD25P03L

STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V

 9.7. Size:605K  st
 stw25nm50n stf25nm50n stb25nm50n std25nm50n.pdf

STD25P03L STD25P03L

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

 9.8. Size:842K  st
 std25nf20.pdf

STD25P03L STD25P03L

STD25NF20Automotive-grade N-channel 200 V, 0.10 typ., 18 A STripFET Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTD25NF20 200 V 0.125 18 A 110 WTAB Designed for automotive applications and 31 AEC-Q101 qualifiedDPAK Extremely low gate charge Exceptional dv/dt capability Low gate input resis

 9.9. Size:285K  inchange semiconductor
 std25nf10la.pdf

STD25P03L STD25P03L

isc N-Channel MOSFET Transistor STD25NF10LAFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 35m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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