NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix

STD25N10F7, STF25N10F7, STP25N10F7N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDSS ID PTOTmax.(1)DPAKSTD25N10F7 100 V 0.035 25 A 40 WSTF25N10F7 100 V 0.035 19 A 25 WTABSTP25N10F7 100 V 0.035 25 A 50 W1. @ VGS = 10 V 33

STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V

STD25NF10LAN-channel 100 V, 0.030 , 25 A DPAKSTripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTD25NF10LA 100 V

STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V

STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V

STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

STD25NF20Automotive-grade N-channel 200 V, 0.10 typ., 18 A STripFET Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTD25NF20 200 V 0.125 18 A 110 WTAB Designed for automotive applications and 31 AEC-Q101 qualifiedDPAK Extremely low gate charge Exceptional dv/dt capability Low gate input resis

isc N-Channel MOSFET Transistor STD25NF10LAFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 35m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol