BLS60R360-A - описание и поиск аналогов

 

BLS60R360-A - Аналоги. Основные параметры


   Наименование производителя: BLS60R360-A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для BLS60R360-A

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLS60R360-A технические параметры

 ..1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R360-A

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 7.1. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R360-A

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.1. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R360-A

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 8.2. Size:1433K  belling
 bls60r036-f bls60r036-w.pdf pdf_icon

BLS60R360-A

BLS60R036 Power MOSFET Step-Down Converter 1 Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BLS60R150-F , BLS60R150F-A , BLS60R150F-B , BLS60R150F-I , BLS60R150F-P , BLS60R150F-W , BLS60R150-P , BLS60R150W , IRFP250N , BLS60R360-B , BLS60R360-D , BLS60R360-P , BLS60R360-U , BLS60R380F-A , BLS60R380F-B , BLS60R380F-D , BLS60R380F-P .

History: BLS60R520-U

 

 
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