ZXM61P03F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXM61P03F
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
Cossⓘ - Выходная емкость: 140 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: SOT23
ZXM61P03F Datasheet (PDF)
zxm61p03f.pdf
ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
zxm61p03f.pdf
Product specificationZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from TY utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Lo
zxm61p03ftc.pdf
ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
zxm61p03fta.pdf
ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
zxm61p02fta zxm61p02ftc.pdf
A Product Line ofDiodes IncorporatedZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo
zxm61p02f.pdf
ZXM61P02F20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.60 ; I =-0.9A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-r
zxm61p02f.pdf
Product specificationZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"
zxm61p02ftc.pdf
ZXM61P02FTCwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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