Справочник MOSFET. IXTA88N085T7

 

IXTA88N085T7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTA88N085T7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 69 nC
   trⓘ - Время нарастания: 90 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IXTA88N085T7

 

 

IXTA88N085T7 Datasheet (PDF)

 ..1. Size:165K  ixys
 ixta88n085t7.pdf

IXTA88N085T7 IXTA88N085T7

Preliminary Technical InformationVDSS = 85 VIXTA88N085T7TrenchMVTMID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C88 A 7IDM

 3.1. Size:217K  ixys
 ixta88n085t ixtp88n085t.pdf

IXTA88N085T7 IXTA88N085T7

Preliminary Technical InformationIXTA88N085T VDSS = 85 VTrenchMVTMIXTP88N085T ID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC =

 9.1. Size:238K  ixys
 ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf

IXTA88N085T7 IXTA88N085T7

Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 9.2. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf

IXTA88N085T7 IXTA88N085T7

TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien

 9.3. Size:163K  ixys
 ixta80n10t7.pdf

IXTA88N085T7 IXTA88N085T7

Preliminary Technical InformationVDSS = 100 VIXTA80N10T7TrenchMVTMID25 = 80 APower MOSFET RDS(on) 14 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C80 A 7I

 9.4. Size:229K  ixys
 ixta8n50p ixtp8n50p.pdf

IXTA88N085T7 IXTA88N085T7

IXTA 8N50P VDSS = 500 VPolarHVTMIXTP 8N50P ID25 = 8 APower MOSFET RDS(on) 0.8 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25 C8 AIDM

 9.5. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf

IXTA88N085T7 IXTA88N085T7

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

 9.6. Size:252K  inchange semiconductor
 ixta80n075l2.pdf

IXTA88N085T7 IXTA88N085T7

isc N-Channel MOSFET Transistor IXTA80N075L2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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