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Analog Power AM3402N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.035 @ VGS = 4.5V 5.5 management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 6 Low rDS(on) provides higher efficiency and 2 5 extends battery life Low thermal impedance copper leadframe 3 4 TSOP-6 saves board space Fast switching speed High performance trench technology ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage V 20 GS T =25oC 6.3

 

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 am3402n.pdf Проектирование, MOSFET, Мощность

 am3402n.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 am3402n.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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