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AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 6.3 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOT29S50L & AOB29S50L & AOTF29S50L Top View TO-263 TO-220 TO-220F D D2PAK D G S S S D D G G S G AOT29S50 AOTF29S50 AOB29S50 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT29S50/A