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SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 m max. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK4004 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. FTK4004 is assembled in high reliability and qualified assembly house. Application Power switching application FTK4004 TOP View (TO220) Commercial-industrial application Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 Continuous drain current,VGS@10V 200 C ID@Tc=100 Continuous drain current,VGS@10V 140 A C ID