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SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics VDSS -40V D RDS(on) 11m (typ.) G ID 20A S Schematic diagram D Features and Benefits Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability 175 operating temperature Description It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute max Rating Symbol Parameter Max. Units ID @ TC = 25 C -20 Continuous Drain Current, VGS @ 10V ID @ TC = 100 C -16 Continuous Dra