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2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Collector power dissipation PC 1.25 1.25 W Junction temperature Tj 150 150 C Storage temperature Tstg 45 to +150 45 to +150 C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25 C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 160 200 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 160 200 V IC = 1 mA, RBE = breakdown vo