Скачать даташит для 2n6300_2n6301:

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6300 60 VCBO Collector-base voltage Open emitter V 2N6301 80 2N6300 60 VCEO Collector-emitter voltage Open base V 2N6301 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 0.12 A PT Total power dissipation TC=25 75 W Tj Junction temperature 200 Tstg Storage temperature -65 200 THERMAL C