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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V(Min) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C ICM Collector Current-Peak 20 A Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4313 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAME