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INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS Drain Current-Continuous@T =25 C 140 I A D 110 T =100 C I Drain Current-Single Pulsed 500 A DM P Total Dissipation 500 W D T Operating Junction Temperature 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.3 /W Rth(ch-a) Channel-to-ambient therma