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isc N-Channel MOSFET Transistor AOT282L FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GSS Drain Current-Continuous;@Tc=25 105 I A D 82 Tc=100 I Drain Current-Single Pulsed 420 A DM P Total Dissipation 272.5 W D T Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.55 /W Rth(ch-a) Channel-to-ambient thermal resistance 60 1 isc website ww