Скачать даташит для irfp3710:

isc N-Channel MOSFET Transistor IRFP3710 IIRFP3710 FEATURES Static drain-source on-resistance RDS(on) 25m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 57 A D I Drain Current-Single Pulsed 180 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 0.75 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered tradem