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BUZ 173 SIPMOS Power Transistor P channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C -3.6 Pulsed drain current IDpuls TC = 25 C -14 Avalanche energy, single pulse EAS mJ ID = -3.6 A, VDD = -25 V, RGS = 25 L = 23 mH, Tj = 25 C 200 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 40 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Data Sheet 1 05.99 BUZ 173 Electrical Characteristics, at Tj = 25 C, unless