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Databook.fxp 1/14/99 11 30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Temperature (both sides) 500 mW Amplifiers Power Derating (both sides) 4.3 mW/ C At 25 C free air temperature 2N3957 2N3958 Process NJ16 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 50 50 V IG = 1 A, VDS = V 100 100 pA VGS = 30V, VDS = V Gate Reverse Current IGSS 500 500 nA VGS = 30V, VDS = V TA = 125 C 50 50 pA VDS = 20V, ID = 200 A Gate Operating Current IG 250 250