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AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175 C Operating Temperature RDS(on) typ.4.8m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9m l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional S S D D features of this design are a 175 C junction operating G G temperature, fast switching speed and improved repetitive TO-247AC avalanche rating . These features combine to make this design TO-247AD AUIRFP4568 an extremely efficient and reliable device for use in Automotive AUIRFP4568-E applicati