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AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ.1.9m l Fast Switching max. 2.3m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon D area. Additional features of this design are a 175 C junction D operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make S this design an extremely efficient and reliable device for use D S G in Automotive applications and wide variety of oth