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PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = -20V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.058 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable SO-8 electroni
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irf7322d1.pdf Проектирование, MOSFET, Мощность
irf7322d1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irf7322d1.pdf База данных, Инновации, ИМС, Транзисторы
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