Скачать даташит для irg4ph50kd:

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed @VGE = 15V, IC = 24A Tighter parameter distribution and higher efficiency E than previous generations n-channel IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Benefits Latest generation 4 IGBT's offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGPH50KD2 and IRGPH50MD2