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PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E 150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 1.43V min, 1.64V max IC = 10A, TJ = 25 C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 1200V min TJ = 25 C, ICES = 1mA, VGE = 0V VGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VGE = VCE ,