Скачать даташит для 2sd1614:

SMD Type Transistors NPN Transistors 2SD1614 1.70 0.1 Features High DC Current Gain hFE 135 to 600. Low VCE(sat) Complementary to 2SB1114 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 A Collector Current - Pulse (Note.1) ICP 3 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 PW 10 ms, Duty cycle 20%. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 20 V Emitter - base breakdown voltage VE