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SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 A Collector Current - Pulse ICP 2 Collector Power Dissipation 0.5 PC W (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 Mounted on ceramic board (250mm 2 0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA RB