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SMD Type MOSFET P-Channel MOSFET 2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss Ciss = 1210 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V VGS(AC) 20 Gate-Source Voltage (Note.1) VGS(DC) -20,0 Continuous Drain Current ID -20 A Pulsed Drain Current (Note.2) IDM -80 Single Avalanche Current (Note.3) IAS -20 70 Tc = 25 Power Dissipation PD W 1.5 Ta = 25 Single Avalanche Energy (Note.3) EAS 40 mJ Thermal Resistance.Junction- to-Ambient RthJA 83.3 /W Thermal Resistance.Junction- to-Case RthJC 1.79 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 f = 20 kHz, Duty Cycle 10% (+S