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2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS= 25 V 100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, V