Скачать даташит для ppngz52f120a:

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25 C (unless otherwise specified) DESCRIPTION SYMBOL MAX. UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES 1200 Volts @ TJ 25 C Collector-to-Gate Breakdown Voltage @ TJ 25 C, RGS= 1 M BVCGR 1200 Volts Continuous Gate-to-Emitter Voltage VGES +/-20