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MMPQ3906 Preferred Device Quad Amplifier/Switch Transistor PNP Silicon http //onsemi.com 1 16 MAXIMUM RATINGS 2 15 Rating Symbol Value Unit 3 14 4 13 Collector-Emitter Voltage VCEO -40 Vdc 5 12 6 11 Collector-Base Voltage VCB -40 Vdc 7 10 Emitter-Base Voltage VEB -5.0 Vdc 8 9 Collector Current - Continuous IC -200 mAdc Each Transistor Power Dissipation @ TA = 25 C PD 200 mW Derate above 25 C 3.2 mW/ C 16 Power Dissipation @ TC = 25 C PD 0.66 Watts Derate above 25 C 5.3 mW/ C 1 Four SO-16 Transistors CASE 751B Equal Power STYLE 4 Power Dissipation @ TA = 25 C PD 800 mW Derate above 25 C 6.4 mW/ C MARKING DIAGRAM Power Dissipation @ TC = 25 C PD 1.92 Watts Derate above 25 C 15.4 mW/ C Operating and Storage TJ, Tstg -55 to +150 C Junction Temperature Range MMPQ3906 AWLYWW MMPQ3906 = Specific Device Code A = Assembly Location WL =

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