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DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. g2 g1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, 1 2 such as television tuners and professional communications equipment. s,b Top view MAM039 DESCRIPTION Marking code MOp. Depletion type field effect transistor in a plastic Fig.1 Simplified outline (SOT143) microminiature SOT143 or SOT143R package with source and symbol; BF998. and substrate interconnected. The transis